Graphene FET with graphitic interface layer at contacts

A semiconductor device having a graphene field-effect transistor (FET), the graphene FET comprising:

• a graphene layer having a graphene surface on a substrate;
• a metal oxide layer over the graphene layer with an open source contact region and an open drain contact region;
• a metal layer including a first metal portion providing a source contact over said graphene layer in the source contact region and a second metal portion providing a drain contact over said graphene layer in the drain contact region, wherein said metal is saturated with carbon;
• a graphitic interface layer between said source contact and said graphene layer and between said drain contact and said graphene layer, and
• at least one of a top gate and back gate structure over a portion of said graphene layer.

A semiconductor device having a graphene field-effect transistor (FET), the graphene FET comprising:

• a graphene layer having a graphene surface on a silicon substrate;
• a metal oxide layer with a first opening in a source contact region and a second opening in a drain contact region;
• a metal layer including a first metal portion providing a source contact over said graphene layer in the first opening and a second metal portion providing a drain contact over said graphene layer in the second opening, wherein said metal layer includes a carbon concentration of at least 1017 atoms/cm3, and wherein said metal layer comprises Ni, Co, Cu, Ru, or Pd;
• a graphitic interface layer between said source contact and said graphene layer and between said drain contact and said graphene layer, and
• at least one of a top gate and back gate structure over a portion of said graphene layer.