Method for forming trench semiconductor device having Schottky barrier structure

A method of forming a semiconductor device, comprising:

• providing a region of semiconductor material comprising a first major surface and a second major surface opposite to the first major surface;
• providing a trench structure comprising:
• a trench extending into the region of semiconductor material from the first major surface;
• and
• a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region, wherein:
• the dielectric region is disposed along opposing sidewall surfaces of the trench and disposed along a lower surface of the trench;
• and
• the dielectric region comprises a first uppermost surface;
• and
• providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure, wherein providing the Schottky contact region comprises:
• forming a first layer of material disposed adjacent to the first major surface, the first layer of material consisting essentially of titanium and having a first thickness;
• forming a second layer of material disposed adjacent to the first layer of material, the second layer of material consisting essentially of nickel-platinum and having a second thickness;
• exposing the first layer of material and the second layer of material to a temperature in a range from about 650 degrees Celsius through about 700 degrees Celsius;
• and
• after the step of exposing, removing any unreacted portions of the first layer of material and the second layer of material.

A method of forming a semiconductor device, comprising:

• providing a region of semiconductor material comprising a first major surface and a second major surface opposite to the first major surface;
• providing a trench structure comprising:
• a trench extending into the region of semiconductor material from the first major surface;
• and
• a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region, wherein:
• the dielectric region is disposed along opposing sidewall surfaces of the trench and disposed along a lower surface of the trench;
• and
• the dielectric region comprises a first uppermost surface;
• and
• providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure, wherein providing the Schottky contact region comprises:
• forming a conductive structure comprising:
• a first layer of material consisting essentially of titanium disposed adjacent to the first major surface and a second layer of material disposed adjacent to the first layer of material and consisting essentially of nickel-platinum;
• exposing the conductive structure to an elevated temperature to form a silicide structure;
• after the step of exposing, removing any unreacted portions of the conductive structure,
• and wherein:
• forming the conductive structure comprises:
• forming the first layer of material consisting essentially of titanium having a first thickness;
• forming the second layer of material consisting essentially of nickel-platinum having a second thickness;
• and
• providing a first thickness to second thickness ratio greater than or equal to 1.33:1;
• and
• exposing comprises exposing the first layer of material and the second layer of material to a temperature in a range from about 650 degrees Celsius through about 700 degrees Celsius.