Nanotube semiconductor devices
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsHamza Yilmaz, Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang
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Abstract
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first epitaxial layer and a second epitaxial layer formed on mesas of the semiconductor layer. The thicknesses and doping concentrations of the first and second epitaxial layers and the mesa are selected to achieve charge balance in operation. In another embodiment, the semiconductor body is lightly doped and the thicknesses and doping concentrations of the first and second epitaxial layers are selected to achieve charge balance in operation.
Claims20
A semiconductor device comprising:
- a first semiconductor layer of a first conductivity type disposed over a second semiconductor layer;
- trenches opened in the first semiconductor layer extending vertically to the second semiconductor layer, the trenches forming mesas in the first semiconductor layer;
- a first epitaxial layer of a second conductivity type formed on sidewalls of the trenches;
- a first dielectric layer formed in the trenches adjacent the first epitaxial layer, the first dielectric layer filling at least part of the trenches;
- an anode contact region of the first conductivity type formed at a top surface of each of one or more mesas of the first semiconductor layer where the mesas are adjacent to trenches that are filled with the first dielectric layer;
- and
- a conductive layer formed on a surface of the second semiconductor layer away from the first semiconductor layer, the conductive layer forming a cathode electrode.
Dependencies are inferred from the claim text.