Quantum dot array devices

A method of manufacturing a quantum dot device, comprising:

• providing a quantum well stack;
• forming a first gate above the quantum well stack, wherein the first gate includes at least two openings spaced apart in a first dimension and at least two openings spaced apart in a second dimension perpendicular to the first dimension;
• and
• forming a plurality of second gates above the quantum well stack, wherein individual ones of the second gates are at least partially disposed in corresponding individual ones of the openings.

A quantum computing device, comprising:

• a quantum processing device, wherein the quantum processing device includes a quantum well stack including an active quantum well layer and a read quantum well layer spaced apart by a barrier layer, a first set of gates to control formation of quantum dots in the active quantum well layer, and a second set of gates to control formation of quantum dots in the read quantum well layer, and wherein the first set of gates includes at least three first gates and a second gate extending between at least two different pairs of first gates;
• a non-quantum processing device, coupled to the quantum processing device, to control voltages applied to the first set of gates and the second set of gates;
• and
• a memory device to store data generated by the read quantum well layer during operation of the quantum processing device.