Diode device and method for manufacturing the same, and diode apparatus

Abstract

The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Dependencies are inferred from the claim text.