Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Robert L. Bruce, Hiroyuki Miyazoe, John Rozen
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Abstract
Embodiments of the invention are directed to a vertical resistive device. A non-limiting example of the vertical resistive device includes a horizontal plate having a conductive electrode region and a filament region. An opening extends through the filament region and is defined by sidewalls of the filament such that the filament region is positioned outside of the opening. A conductive pillar is positioned within the opening and is communicatively coupled to the filament region.
Claims14
A vertical resistive device comprising:
- a horizontal plate comprising a conductive electrode region and a filament region;
- an opening extending through the filament region and defined by sidewalls of the filament region, wherein the filament region is positioned outside of the opening;
- and
- a conductive pillar positioned within the opening and communicatively coupled to the filament region;
- wherein the conductive electrode region functions as a bottom electrode of a resistive switching device (RSD);
- wherein the filament region functions as an insulator region of the RSD;
- wherein the conductive pillar functions as a top electrode of the RSD;
- and
- wherein an oxygen vacancy concentration of the RSD is controlled by:
- a thickness of a plurality of metals forming the top electrode;
- and
- a percentage of one of the plurality of metals forming the top electrode.
A vertical resistive device comprising:
- a horizontal plate comprising a conductive electrode region and a filament region;
- an opening extending through the filament region and defined by sidewalls of the filament region, wherein the filament region is positioned outside of the opening;
- and
- a conductive pillar positioned within the opening and communicatively coupled to the filament region;
- wherein the conductive pillar comprises a reactive electrode and a metal fill material;
- wherein the reactive electrode comprises:
- a bottom layer comprising titanium nitride (TiN) and having a thickness dimension from about 0.3 nm to about 3.0 nm;
- an intermediate layer comprising (M)AlC, where M is a transition metal selected from the group consisting of titanium (Ti), tantalum (Ta), and Niobium (Nb), wherein the intermediate layer comprises a thickness dimension from about 1 nm to about 10 nm;
- and
- a top layer comprising TiN and having a thickness dimension from about 1 nm to about 3 nm.
A method of forming a vertical resistive device, the method comprising:
- forming a stack comprising:
- a horizontal plate comprising a conductive electrode region and a filament region;
- an opening extending through the filament region and defined by sidewalls of the filament region, wherein the filament region is positioned outside of the opening;
- and
- a conductive pillar positioned within the opening and communicatively coupled to the filament region;
- wherein the conductive electrode region functions as a bottom electrode of a resistive switching device (RSD);
- wherein the filament region functions as an insulator region of the RSD;
- wherein the conductive pillar functions as a top electrode of the RSD;
- and
- controlling an oxygen vacancy concentration of the RSD by:
- controlling a thickness of a plurality of metals forming the top electrode;
- and
- controlling a percentage of one of the plurality of metals forming the top electrode.
Dependencies are inferred from the claim text.