Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures

A method for fabricating an integrated circuit including a magnetic tunnel junction (MTJ) structure, the method comprising:

• forming a dielectric layer over the substrate;
• forming magnetic tunnel junction (MTJ) layers over a substrate;
• depositing a sacrificial material over the MTJ layers;
• etching a via hole through the sacrificial material;
• depositing conductive material in the via hole in contact with the uppermost surface of the MTJ layers to form a conductive pillar over the MTJ layers, wherein the conductive pillar is formed with an uppermost surface, and wherein the uppermost surface is not planarized;
• and
• etching the MTJ layers to form a pillar structure from portions of the MTJ layers underlying the conductive pillar,
• wherein forming the MTJ layers over the substrate comprises forming the MTJ layers over the dielectric layer, and
• wherein etching the MTJ layers to form the pillar structure comprises etching the MTJ layers and a portion of the dielectric layer.

A method for fabricating an integrated circuit including a magnetic tunnel junction (MTJ) structure, the method comprising:

• forming magnetic tunnel junction (MTJ) layers over a substrate;
• forming a conductive pillar over the MTJ layers, wherein the conductive pillar is formed with an uppermost surface, and wherein the uppermost surface is not planarized;
• etching the MTJ layers to form a pillar structure from portions of the MTJ layers underlying the conductive pillar;
• depositing an encapsulation material over the substrate and over and around the pillar structure;
• and
• etching the encapsulation material from the substrate and from over the pillar structure to define an encapsulation layer around sidewalls of the pillar structure.