Magnetic memory cell including two-terminal selector device

A memory cell comprising:

• a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, said magnetic free layer structure including one or more magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, said magnetic reference layer structure including one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof;
• and
• a two-terminal selector element coupled to said MTJ memory element in series, said two-terminal selector element including:
• a first electrode and a second electrode with a volatile switching layer interposed therebetween, said volatile switching layer including a plurality of metal-rich particles or clusters embedded in an insulating matrix;
• a third electrode formed adjacent to said first electrode opposite said volatile switching layer;
• and
• a fourth electrode formed adjacent to said second electrode opposite said volatile switching layer.