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US 10,593,721 B2Granted
Solid-state imaging element, method of manufacturing the same, and imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorKenichi Nishizawa
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Abstract
In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.
Claims12
A solid-state imaging element, comprising:
- a semiconductor substrate;
- a photodiode in the semiconductor substrate;
- a photoelectric conversion film on a light incident side of the photodiode;
- a planarizing film on the photoelectric conversion film;
- and
- a light shielding film at least partially buried within the photoelectric conversion film, wherein
- the photoelectric conversion film covers a first portion of the light shielding film, and
- the planarizing film covers a second portion of the light shielding film.
5 more elements
Dependencies are inferred from the claim text.