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US 10,593,703 B2Granted
Display device and method for manufacturing display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.
Claims20
A display device comprising:
- a flexible substrate;
- a first gate electrode over the flexible substrate;
- a first insulating film over the first gate electrode;
- an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode;
- a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film;
- a second insulating film and a third insulating film over the oxide semiconductor film;
- a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film;
- and
- a capacitor,
- wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and a fourth insulating film between the first electrode and the second electrode,
- wherein the first electrode comprises a first region in contact with the fourth insulating film,
- wherein the first electrode is provided on a same surface as the oxide semiconductor film,
- wherein the first electrode comprises a same material as the oxide semiconductor film,
- wherein the fourth insulating film comprises a same material as the third insulating film, and
- wherein the second electrode comprises a same material as the second gate electrode.
12 more elements
A display device comprising:
- a flexible substrate;
- a first gate electrode over the flexible substrate;
- a first insulating film over the first gate electrode;
- an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode;
- a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film;
- a second insulating film and a third insulating film over the oxide semiconductor film;
- a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film;
- a light-emitting element electrically connected with the source electrode or the drain electrode;
- and
- a capacitor,
- wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and a fourth insulating film between the first electrode and the second electrode,
- wherein the first electrode comprises a first region in contact with the fourth insulating film,
- wherein the first electrode is provided on a same surface as the oxide semiconductor film,
- wherein the first electrode comprises a same material as the oxide semiconductor film,
- wherein the fourth insulating film comprises a same material as the third insulating film,
- wherein the second electrode comprises a same material as the second gate electrode, and
- wherein the light-emitting element comprises a region overlapping with the capacitor.
14 more elements
A display device comprising:
- a transistor and a capacitor,
- wherein the transistor comprises:
- a first gate electrode;
- a first insulating film over the first gate electrode;
- an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode;
- a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film;
- a second insulating film and a third insulating film over the oxide semiconductor film;
- and
- a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film,
- wherein the capacitor comprises:
- a first electrode over the first insulating film;
- a second electrode over the first electrode;
- and
- a fourth insulating film between the first electrode and the second electrode,
- wherein the first electrode comprises a first region in contact with the fourth insulating film,
- wherein the first electrode is provided on a same surface as the oxide semiconductor film,
- wherein the first electrode comprises a same material as the oxide semiconductor film,
- wherein the fourth insulating film comprises a same material as the third insulating film,
- wherein the second electrode comprises a same material as the second gate electrode, and
- wherein an end portion of the second gate electrode is located on an outer side of an end portion of the oxide semiconductor film in a channel width direction.
17 more elements
Dependencies are inferred from the claim text.