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US 10,593,697 B1Granted
Memory device
AssigneeMacronix International Co., Ltd.
InventorsChih-Wei Hu, Teng-Hao Yeh, Yu-Wei Jiang, Kuo-Pin Chang
Life of this patent
Estimating the term…
Abstract
A memory device includes a channel element, a gate electrode layer and a memory element. The channel element has a U shape. The gate electrode layer is electrically coupled to the channel element. The memory element surrounds a sidewall channel surface of the channel element.
Claims20
A memory device, comprising:
- a dielectric strip;
- a channel element having a U shape and being mirror-symmetric with respect to the dielectric strip;
- a gate electrode layer electrically coupled to the channel element;
- and
- a memory element surrounding a sidewall channel surface of the channel element, and being between the dielectric strip and the channel element, wherein a memory cell is defined in the memory element between the channel element and the gate electrode layer.
2 more elements
Dependencies are inferred from the claim text.