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US 10,593,694 B2Granted
Method for manufacturing semiconductor memory device and semiconductor memory device
AssigneeToshiba Memory Corporation
InventorsHirotaka Tsuda, Yusuke Oshiki
Life of this patent
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Abstract
According to one embodiment, a method for manufacturing a semiconductor memory device includes simultaneously forming a plurality of first holes and a plurality of second holes in a stacked body. The stacked body includes a plurality of first layers and a plurality of second layers. The method includes etching a portion between the second holes next to each other in the stacked body, and connecting at least two or more second holes to form a groove. The method includes forming a film including a charge storage film on a sidewall of the first holes. The method includes forming a channel film on a sidewall of the film including the charge storage film.
Claims20
A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers stacked with insulators interposed between the electrode layers, the electrode layers including at least a first electrode layer and a second electrode layer provided below the first electrode layer, the first electrode layer functioning a control gate of a memory cell and the second electrode layer functioning a control gate of a select transistor;
- a plurality of separation portions each extending in a stacking direction of the stacked body and in a first direction intersecting the stacking direction and separating the stacked body in a second direction intersecting the stacking direction and the first direction, the separation portions including a first separation portion disposed between a first portion and a second portion of the stacked body and a second separation portion disposed between the first portion and a third portion of the stacked body, the first portion and the second portion having a pair of first sidewalls facing each other with the first separation portion interposed, the first portion and the third portion having a pair of second sidewalls facing each other with the second separation portion interposed, and at least the first electrode layer included in the stacked body being not separated in the second direction inside the first portion of the stacked body;
- and
- a plurality of columnar portions each penetrating through the electrode layers in the stacking direction and including a semiconductor film extending in the stacking direction and a cylindrical film provided between the electrode layers and the semiconductor film, the columnar portions including a first columnar portion, a second columnar portion and a third columnar portion each extending inside the first portion of the stacked body, the first columnar portion and the second columnar portion being arranged in the first direction, and the first columnar portion and the third columnar portion being arranged in the second direction,
- a width in the second direction between the pair of first sidewalls and a width in the second direction between the pair of second sidewalls both being larger than diameters of the columnar portions,
- the pair of the first sidewalls and the pair of the second sidewalls each having shapes in which a plurality of concave portions are disposed on both sides along the first direction, the concave portions being arranged periodically in the first direction.
3 more elements
A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers stacked with insulators interposed between the electrode layers, the electrode layers including at least a first electrode layer and a second electrode layer provided below the first electrode layer, the first electrode layer functioning a control gate of a memory cell and the second electrode layer functioning a control gate of a select transistor;
- a separation portion extending in a stacking direction of the stacked body and in a first direction intersecting the stacking direction and separating the stacked body into a first portion and a second portion of the stacked body in a second direction intersecting the stacking direction and the first direction, the separation portion being disposed between the first portion and the second portion of the stacked body, the first portion and the second portion having a pair of sidewalls facing each other with the separation portion interposed;
- and
- a plurality of columnar portions each penetrating through the electrode layers in the stacking direction and including a semiconductor film extending in the stacking direction and a cylindrical film provided between the electrode layers and the semiconductor film,
- the sidewalls having shapes in which a plurality of concave portions are disposed in the first direction on the first portion side and on the second portion side respectively, the concave portions on the first portion side and the concave portions on the second portion side being arranged in the first direction respectively in a same pitch as the columnar portions arranged in the first direction adjacent to the separation portion.
2 more elements
A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers stacked with insulators interposed between the electrode layers, the electrode layers including at least a first electrode layer and a second electrode layer provided below the first electrode layer, the first electrode layer functioning a control gate of a memory cell and the second electrode layer functioning a control gate of a select transistor;
- a plurality of columnar portions arranged in a staggered arrangement so as to penetrate through the electrode layers in a stacking direction of the stacked body, each of the columnar portions including a semiconductor film extending in the stacking direction and a cylindrical film provided between the electrode layers and the semiconductor film;
- and
- a separation portion extending in the stacking direction and in a first direction intersecting the stacking direction, and separating the stacked body into a first portion and a second portion of the stacked body in a second direction intersecting the stacking direction and the first direction, the separation portion being disposed between the first portion and the second portion of the stacked body so that the first portion and the second portion have a pair of sidewalls facing each other with the separation portion interposed,
- the pair of sidewalls including a sidewall on the first portion side and a sidewall on the second portion side,
- a plurality of first concave portions being disposed at the sidewall on the first portion side along the first direction, a plurality of second concave portions being disposed at the sidewall on the second portion side along the first direction, and
- the first concave portions and the second concave portions having asymmetric positional relationship in the first direction with respect to a central axis of the separation portion along the first direction.
4 more elements
Dependencies are inferred from the claim text.