Hybrid bonding contact structure of three-dimensional memory device

A method for forming a three-dimensional (3D) NAND memory device, comprising:

• forming, on a first substrate, an alternating dielectric stack comprising a plurality of dielectric layer pairs, each of the plurality of dielectric layer pairs comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer;
• forming at least one barrier structure each extending vertically through the alternating dielectric stack, wherein the at least one barrier structure separates the alternating dielectric stack into at least one first region enclosed laterally by at least the barrier structure, and a second region;
• forming a plurality of slits, and replacing, through the slits, first dielectric layers in the second portion of the alternating dielectric stack with conductor layers to form an alternating conductor/dielectric stack comprising a plurality of conductor/dielectric layer pairs;
• depositing a conductive material into the slits to form a plurality of slit structures;
• forming a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack;
• forming an array interconnection layer in contact with the plurality of through array contacts;
• and
• bonding the array interconnection layer to a peripheral interconnection layer on a second substrate, such that at least one of the plurality of through array contacts is electrically connected with a peripheral circuit on the second substrate.