Semiconductor device and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorTamotsu Ogata
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Abstract
A semiconductor device whose performance is improved is disclosed. In the semiconductor device, an offset spacer formed in a memory cell is formed by a laminated film of a silicon oxide film and a silicon nitride film, and the silicon oxide film is particularly formed to directly contact the sidewall of a memory gate electrode and the side end portion of a charge storage film; on the other hand, an offset spacer formed in a MISFET is formed by a silicon nitride film. Particularly in the MISFET, the silicon nitride film directly contacts both the sidewall of a gate electrode and the side end portion of a high dielectric constant film.
Claims10
A semiconductor device comprising a non-volatile memory cell and a field-effect transistor on a main surface of a semiconductor substrate,
- wherein the non-volatile memory cell comprises:
- a first insulating film formed over the main surface and including a charge storage film;
- a first gate electrode formed over the first insulating film;
- and
- a first offset spacer formed over a side surface of the first gate electrode and including a silicon oxide film contacting the charge storage film, and wherein the field-effect transistor comprises:
- a second insulating film formed over the main surface and containing a metal compound;
- a second gate electrode formed over the second insulating film;
- and
- a second offset spacer formed over a side surface of the second gate electrode and including a silicon nitride film contacting the second insulating film.
Dependencies are inferred from the claim text.