Semiconductor device with suppression of electric field concentration
AssigneeRohm Co., Ltd.
InventorsToshiyuki Kanaya, Tsuyoshi Hosono
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor layer having a main surface, a gate insulating film including a thin film portion forming a tunnel window, a thick film portion formed around the thin film portion and having a thickness larger than a thickness of the thin film portion, and an inclined portion connecting the thin film portion and the thick film portion and inclined upward from the thin film portion toward the thick film portion, and covering the main surface of the semiconductor layer, a memory gate structure formed on the thin film portion of the gate insulating film, and a select gate structure formed on the thick film portion of the gate insulating film.
Claims11
A semiconductor device comprising:
- a semiconductor layer having a main surface;
- a gate insulating film including a thin film portion forming a tunnel window, a thick film portion formed around the thin film portion and having a thickness larger than a thickness of the thin film portion, and an inclined portion connecting the thin film portion and the thick film portion and inclined upward from the thin film portion toward the thick film portion, and covering the main surface of the semiconductor layer;
- a memory gate structure formed on the thin film portion of the gate insulating film;
- and
- a select gate structure formed on the thick film portion of the gate insulating film;
- wherein an angle θ of the inclined portion in the gate insulating film is more than 0° and less than 45°.
Dependencies are inferred from the claim text.