Semiconductor structure with capacitor landing pad and method of make the same

A method of fabricating a capacitor landing pad, comprising:

• providing a substrate having a plurality of contact structures therein;
• forming a first dielectric layer on the substrate;
• forming a plurality of first recesses in the first dielectric layer, wherein each of the first recesses exposes one of the contact structures and presents a shape of a wide top and a narrow bottom, and steps of forming the first recesses in the first dielectric layer further comprises:
• forming a first photoresist on the first dielectric layer, wherein the first photoresist presents a plurality of stripe patterns extending along a first direction and does not overlap the contact structures below;
• performing a first etching process to remove a portion of the first dielectric layer by using the first photoresist as an etching mask;
• forming a second photoresist on the first dielectric layer, wherein the second photoresist presents a plurality of stripe patterns extending along a second direction and does not overlap the contact structures below;
• and
• performing a second etching process to remove a portion of the first dielectric layer by using the second photoresist as an etching mask to expose the contact structures below;
• and
• filling a contact material in the first recesses to form capacitor landing pads, wherein top surfaces of the capacitor landing pads have a concave shape.