Diode connected vertical transistor
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Pouya Hashemi, Alexander Reznicek
Life of this patent
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Abstract
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.
Claims20
A method of forming an electrical device comprising:
- forming a transistor device in a first region of a substrate comprising a transistor channel, a first transistor source/drain region that is provided by an electrically conductive region at a first end of the transistor channel, and a transistor gate structure that is separated from the first transistor source/drain region of the transistor by a dielectric spacer;
- and
- forming a diode connected transistor device in a second region of the substrate comprising a diode channel, a first diode source/drain region provided by the electrically conductive region at a first end of the diode channel, and a diode gate structure in direct contact with the first diode source/drain region.
A method of forming an electrical device comprising:
- forming a transistor device in a first region of a substrate comprising a transistor channel, a first transistor source/drain region that is provided by an electrically conductive region at a first end of the transistor channel region, and a transistor gate structure that is separated from the first transistor source/drain region of the transistor by a dielectric spacer, wherein the transistor gate structure is formed in a process that includes forming the dielectric spacer on the electrically conductive surface, forming a transistor gate dielectric on the vertically orientated channel region, and forming a gate conductor on the gate dielectric;
- and
- forming a diode connected transistor device in a second region of the substrate comprising a diode channel, a first diode source/drain region provided by the electrically conductive surface at a first end of the diode channel, and a diode gate structure in electrical contact with the first diode source/drain region, wherein the diode gate structure is formed by a sequence that includes forming a diode gate dielectric on the diode channel region and on a portion of the dielectric spacer that is present on the electrically conductive surface region in which the vertically orientated diode is formed.
Dependencies are inferred from the claim text.