Semiconductor device and corresponding manufacturing method

A semiconductor device, comprising:

• a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region;
• a first metallization on a front side of the semiconductor body;
• a contact region that forms an Ohmic contact with the second silicon carbide region;
• a barrier-layer arranged between the first metallization and the contact region and that is in Ohmic connection with the first metallization and the contact region;
• a second metallization opposite the first metallization and in Ohmic connection with the first silicon carbide region;
• a connecting path running through the semiconductor body and between the first side and the second metallization without crossing a pn-junction;
• and
• a silicon carbide contact layer arranged at the second metallization and in Ohmic connection with the second metallization,
• wherein the barrier-layer forms a Schottky junction with the first silicon carbide region,
• wherein the barrier-layer comprises molybdenum nitride.

A semiconductor device, comprising:

• a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region;
• a first metallization on a front side of the semiconductor body;
• a contact region that forms an Ohmic contact with the second silicon carbide region;
• a barrier-layer arranged between the first metallization and the contact region and that is in Ohmic connection with the first metallization and the contact region;
• and
• an edge-termination structure arranged at the front side and surrounding the first silicon carbide region and the second silicon carbide region,
• wherein the barrier-layer forms a Schottky junction with the first silicon carbide region,
• wherein the barrier-layer comprises molybdenum nitride.