Light emitting device and method of forming the same

A method of forming a light emitting device, comprising:

• providing a carrier with a plurality of buffer pads and a plurality of light emitting diode chips, wherein the buffer pads are disposed between the carrier and the light emitting diode chips and are with Young's modulus of 2˜10 GPa, each of the plurality of light emitting diode chips comprises an epitaxial structure, a bottom surface of the epitaxial structure is wider than a top surface of the epitaxial structure, and each of the plurality of buffer pads is in contact with the bottom surface of the epitaxial structure;
• positioning the carrier over a receiving substrate;
• performing a thermal bonding process to electrically connect the light emitting diode chips to the receiving substrate, and wherein the buffer pads and the receiving substrate are located at opposite sides of each light emitting diode chip;
• removing the carrier and the buffer pads from the light emitting diode chips after the thermal bonding process;
• and
• providing a cover glass with a plurality of electrodes to electrically connect to the light emitting diode chips.

A light emitting device, comprising:

• a carrier;
• a plurality of light emitting diode chips disposed on the carrier, wherein each light emitting diode chip comprises:
• a first type semiconductor layer;
• an active layer, disposed on the first type semiconductor layer;
• a second type semiconductor layer, disposed on the active layer, wherein the first type semiconductor layer, the active layer and the second type semiconductor layer define an epitaxial structure;
• and
• a plurality of bonding pads, disposed on one side of the epitaxial structure and comprising a first bonding pad electrically connected to the first type semiconductor layer and a second bonding pad electrically connected to the second type semiconductor layer;
• a plurality of buffer pads, located on the carrier and disposed between the carrier and the epitaxial structures, wherein each buffer pad is corresponding to one of the light emitting diode chips and is with Young's modulus of 2˜10 GPa, and a gap between any adjacent two of the buffer pads is 0.2 times to 2 times of a side length of each of the epitaxial structures, an area of an orthographic projection of each of the plurality of light emitting diode chips on the carrier and an area of an orthographic projection of each of the plurality of the buffer pads on the carrier are less than and completely in an area of the carrier, respectively,
• wherein each light emitting diode chip further comprises a via hole sequentially penetrating through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer, and the second bonding pad contacts the second type semiconductor layer in the via hole,
• wherein each light emitting diode chip further comprises an insulating layer, disposed on the first tune semiconductor layer and a sidewall of the via hole, wherein the insulating layer forms a contact opening to expose the first type semiconductor layer and forms another opening in the via hole to expose the second type semiconductor layer, and the first bonding pad is disposed in the contact opening, the second bonding pad is disposed in another opening, and a portion of the insulating layer is located between the side wall of the via hole and the second bonding pad.