Semiconductor device and a corresponding method of manufacturing semiconductor devices

A device comprising:

• a passivation layer;
• an interconnection metallization having a peripheral portion on the passivation layer;
• a diffusion barrier layer separating the peripheral portion of the interconnection metallization from the passivation layer;
• an outer surface coating that coats said interconnection metallization, the outer surface coating including a lateral wall having a foot that is adjacent to an end portion of the diffusion barrier layer;
• a dielectric layer arranged between said passivation layer and said diffusion barrier layer;
• and
• a hollow recess area between said passivation layer and the end portion of said barrier layer and between said passivation layer and the foot of the outer surface coating, said dielectric layer defining a side wall of the hollow recess area.

A semiconductor device, including:

• a first dielectric layer;
• a passivation layer over the dielectric layer;
• a via through said passivation layer and said dielectric layer;
• an interconnection metallization having a metallization body, extending in and above the via, and a peripheral portion on the passivation layer;
• an outer surface coating that coats the interconnection metallization;
• a diffusion barrier layer including a peripheral portion and via portion, the peripheral portion of the diffusion barrier layer separating the peripheral portion of the interconnection metallization from the passivation layer and the via portion extending in the via and separating the metallization body from walls of the first dielectric layer and passivation layer that define walls of the via;
• a second dielectric layer arranged between said passivation layer and the peripheral portion of the diffusion barrier layer;
• and
• a hollow recess area between said passivation layer and an end portion of said diffusion barrier layer and between said passivation layer and a foot of the outer surface coating.