Semiconductor device with metallization structure on opposite sides of a semiconductor portion

A semiconductor device comprising:

• a semiconductor layer with a thickness of at most 50 μm;
• a first metallization structure disposed on a first surface of the semiconductor layer, the first metallization structure comprising a first copper region with a first thickness;
• a second metallization structure disposed on a second surface of the semiconductor layer, the second surface being opposite to the first surface, wherein the second metallization structure comprises a second copper region with a second thickness, wherein a total thickness, which is the sum of the first thickness and the second thickness, deviates from the thickness of the semiconductor layer by not more than 20% and a difference between the first thickness and the second thickness is not more than 20% of the total thickness;
• a peripheral device region of the semiconductor device between a central device region of the semiconductor device and a lateral outer surface of the semiconductor layer, wherein a lateral outer surface of the first metallization structure is within the central device region, and wherein a lateral outer surface of the second metallization structure is within the peripheral device region;
• and
• an intermediate region between the first metallization structure and the first surface of the semiconductor layer that is absent from the peripheral device region.