Electrical fuse and/or resistors structures
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Juntao Li
Life of this patent
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Abstract
Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.
Claims18
A semiconductor structure, comprising:
- metal gates having a capping material on a top surface thereof;
- contact structures in recesses in a dielectric material between the metal gates;
- an opening in the dielectric material, wherein the opening is between the contact structures;
- and
- an insulator material and metal material within the opening,
- wherein the metal material contacts surfaces of the dielectric material in the opening, and
- the insulator material is in a trench in the metal material.
A semiconductor structure, comprising:
- metal gate structures in a dielectric material;
- a capping material over the metal gate structures;
- recesses in the dielectric material between the metal gate structures;
- contact structures in the recesses in the dielectric material between the metal gate structures;
- an opening in the dielectric material and between the contact structures;
- a metal material within the opening;
- and
- an insulator material within the metal material.
A semiconductor structure, comprising:
- a dielectric material on an underlying insulator layer;
- a first gate and a second gate on the underlying insulator layer and in the dielectric material;
- a first contact and a second contact in the dielectric material between the first gate and the second gate;
- a metal material in an opening in the dielectric material between the first contact and the second contact;
- and
- an insulator material in the metal material in the opening.
Dependencies are inferred from the claim text.