Integrated capacitors on lead frame in semiconductor devices
AssigneeSTMicroelectronics S.r.l.
InventorsFulvio Vittorio Fontana, Giovanni Graziosi
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Abstract
In an embodiment, a semiconductor device includes: a lead-frame including one or more electrically conductive areas, one or more dielectric layers over the electrically conductive area or areas, one or more electrically conductive layer over the one or more dielectric layers thus forming one or more capacitors each including the dielectric layer sandwiched between an electrically conductive area and the electrically conductive layer. The semiconductor device also includes a semiconductor die on the lead-frame electrically connected to the one or more electrically conductive layers.
Claims17
A semiconductor device, comprising:
- a lead-frame including an electrically conductive area,
- a dielectric layer formed on said electrically conductive area,
- an electrically conductive layer formed on said dielectric layer, said dielectric layer being sandwiched between said electrically conductive area and said electrically conductive layer, said electrically conductive area, dielectric layer, and electrically conductive layer forming a capacitor integrated in said semiconductor device,
- a semiconductor die arranged onto said lead-frame and electrically connected to said electrically conductive layer, and
- at least one conductive bump in physical contact with said semiconductor die and said electrically conductive layer.
A semiconductor device, comprising:
- a lead-frame including a top surface, a recess extending below the top surface, and an electrically conductive area defining a bottom of the recess;
- a dielectric layer formed in the recess and on said electrically conductive area;
- an electrically conductive layer formed in the recess and on said dielectric layer, said dielectric layer being sandwiched between said electrically conductive area and said electrically conductive layer, said electrically conductive area, dielectric layer, and electrically conductive layer forming a capacitor integrated in said semiconductor device, and
- a semiconductor die arranged on said top surface of said lead-frame and said electrically conductive layer and electrically connected to said electrically conductive layer.
A semiconductor device, comprising:
- a lead-frame including an electrically conductive peripheral area and an electrically conductive central area spaced apart from the peripheral area;
- a dielectric layer formed on said peripheral area;
- an electrically conductive layer formed on said dielectric layer, said dielectric layer being sandwiched between said electrically conductive area and said electrically conductive layer, said electrically conductive area, dielectric layer, and electrically conductive layer forming a capacitor integrated in said semiconductor device;
- a semiconductor die arranged above the central and peripheral areas of said lead-frame and electrically connected to said electrically conductive layer;
- and
- at least one conductive bump in physical contact with said semiconductor die and said electrical conductive layer.
Dependencies are inferred from the claim text.