Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

A method for producing a semiconductor module comprising a ceramic interconnect device having at least one semiconductor component, wherein the at least one semiconductor component is covered by an encapsulating compound comprising a cured inorganic cement and having a thermal expansion coefficient in the range of 2 to 10 ppm/K, the method comprising:

• providing the ceramic interconnect device having the at least one semiconductor component,
• forming the cured inorganic cement by mixing a powdered mixture of an inorganic binding agent and inorganic additives with water to form a pourable mass, pouring the pourable mass, and setting and drying the poured mass for 30 to 120 minutes in a temperature range of 20° C. to 120° C., wherein the powdered mixture of the inorganic binding agent and the inorganic additives is a magnesium phosphate cement, and
• covering the at least one semiconductor component with the encapsulating compound comprising the cured inorganic cement and having the thermal expansion coefficient in the range of 2 to 10 ppm/K,
• wherein the ceramic of the ceramic interconnect device is selected from the group consisting of ceramics based on aluminum oxide, aluminum nitride, and silicon nitride.