Back to results
US 10,593,602 B2Granted
Semiconductor substrate crack mitigation systems and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. Seddon
Life of this patent
Estimating the term…
Abstract
Implementations of a method for healing a crack in a semiconductor substrate may include identifying a crack in a semiconductor substrate and heating an area of the semiconductor substrate including the crack until the crack is healed.
Claims19
A method for healing a crack in a semiconductor substrate, the method comprising:
- identifying a crack in a semiconductor substrate;
- heating an area of the semiconductor substrate comprising the crack until the crack is healed;
- electronically identifying the heated area of the semiconductor substrate;
- processing the semiconductor substrate;
- forming a plurality of semiconductor die in at least a portion of the semiconductor substrate;
- and
- excluding semiconductor die formed in the heated area of the semiconductor substrate from further functional use.
4 more elements
A method for mitigating propagation of a crack in a semiconductor substrate, the method comprising:
- identifying a crack in a semiconductor substrate;
- removing a portion of the semiconductor substrate comprising the crack;
- coupling the semiconductor substrate to a carrier substrate;
- completing the processing of the semiconductor substrate while coupled to the carrier substrate;
- and
- forming a plurality of semiconductor die therefrom.
3 more elements
A method for healing a crack in a boule, the method comprising:
- identifying a crack in a boule;
- and
- heating an area of the boule comprising the crack until the crack is healed.
A method for identifying damaged semiconductor die comprising:
- identifying an area comprising a crack in one of a boule and semiconductor substrate;
- electronically marking the area;
- and
- processing one of the boule and semiconductor substrate into a plurality of semiconductor die while excluding semiconductor die from the marked area of one of the boule and semiconductor substrate from further processing following singulation of the plurality of semiconductor die.
1 more element
Dependencies are inferred from the claim text.