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US 10,593,599 B2Granted
Contact structures
AssigneeGlobalfoundries Inc.
InventorsChanro Park, Stan Tsai
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.
Claims20
A method comprising:
- partially recessing an isolation region between adjacent gate structures, capping material over edges of the adjacent gate structures and below metallization overburden of source/drain metallization,
- planarizing the metallization overburden to a level of the adjacent gate structures, while maintaining a recessed portion of the capping material of the adjacent gate structures which has not been removed and of the isolation region of the adjacent gate structures below the planarized metallization overburden;
- and
- forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.
1 more element
A method comprising:
- forming a recess in dielectric material and capping material of gate structures by:
- removing the dielectric material that is above a surface of the gate structures and within cobalt overburden of source/drain metallization features;
- removing liner material that is above and between adjacent gate structures of the gate structures;
- and
- partially removing edges of the capping material of the adjacent gate structures;
- planarizing the cobalt overburden to the capping material of the gate structures which has not been removed, after the removing of the dielectric material, the liner material and the edges of the capping material;
- depositing interlevel dielectric material on the capping material and the source/drain metallization features;
- and
- forming source/drain contacts to the source/drain metallization features within the interlevel dielectric material, on sides of an extending above the gate structures,
- wherein the planarizing of the cobalt overburden reduces a height of the recess between the adjacent gate structures, which includes at least the removed edges of the capping material.
7 more elements
Dependencies are inferred from the claim text.