Semiconductor structures
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei Zhou
Life of this patent
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Abstract
Semiconductor structure is provided. An exemplary semiconductor structure includes a semiconductor substrate including fin structures. The fin structures include a plurality of first fin structures having a first width and a plurality of second fin structures. The second fin structure has a second width at a lower portion and a third width at an upper portion, and the second width is greater than each of the first width and the third width. The semiconductor structure includes a first isolation film formed on the semiconductor substrate and between adjacent fin structures. The first isolation film has a top surface lower than the fin structures. The upper portion of each second fin structure having the third width passes through the top surface of the first isolation film.
Claims10
A semiconductor structure, comprising:
- a semiconductor substrate including fin structures, the fin structures including a plurality of first fin structures having a first width and a plurality of second fin structures, wherein:
- the second fin structure has a second width at a lower portion and a third width at an upper portion, and
- the second width is greater than each of the first width and the third width;
- and
- a first isolation film formed on the semiconductor substrate and between adjacent fin structures, wherein:
- the first isolation film has a top surface lower than the fin structures, and
- the upper portion of each second fin structure having the third width passes through the top surface of the first isolation film;
- and
- a by-product layer formed on a top surface of the lower portion of the second fin structures, wherein the by-product layer has a top surface coplanar with the top surface of the first isolation film and a side surface coplanar with a side surface of the lower portion of the second fin structures.
A semiconductor structure, comprising:
- a semiconductor substrate including fin structures, the fin structures including a plurality of first fin structures having a first width and a plurality of second fin structures, wherein:
- the second fin structure has a second width at a lower portion and a third width at an upper portion, and
- the second width is greater than each of the first width and the third width;
- a first isolation film formed on the semiconductor substrate and between adjacent fin structures, wherein:
- the first isolation film has a top surface lower than the fin structures, and
- the upper portion of each second fin structure having the third width passes through the top surface of the first isolation film;
- a by-product layer formed on a top surface of the lower portion of the second fin structures having the second width and on a sidewall of the upper portion of the second fin structures having the third width;
- a second isolation film on a top portion of the first isolation film, on a sidewall of the by-product layer, and having a top surface coplanar with the first isolation film;
- and
- a control layer between the first and second isolation films and, between the second isolation film and the by-product layer.
Dependencies are inferred from the claim text.