Selectively etched self-aligned via processes
AssigneeMicromaterials LLC
InventorsYung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang, Uday Mitra, Regina Freed
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Abstract
Methods of forming a self-aligned via comprising recessing a first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is formed on the first insulating layer. A via is formed through the second insulating layer to one of the first conductive lines. Semiconductor devices comprising the self-aligned via and apparatus for forming the self-aligned via are also disclosed.
Claims20
A method to provide a self-aligned via, the method comprising:
- recessing first conductive lines on a first insulating layer on a substrate, the first conductive lines extending along a first direction on the first insulating layer;
- depositing a second insulating layer on the first insulating layer and the recessed first conductive lines;
- forming a hardmask on the second insulating layer, the hardmask having a first opening aligned with one of the first conductive lines;
- forming a photoresist on the hardmask, the photoresist having a second opening aligned with the first opening;
- partially etching the second insulating layer to a depth through the second opening;
- removing the photoresist to leave the hardmask with the first opening;
- and
- etching the second insulating layer through the first opening to form a via.
A method of forming a self-aligned via, the method comprising:
- providing a substrate comprising a first insulating layer with a plurality of first conductive lines extending in a first direction;
- recessing the first conductive lines so that a top surface of the first conductive lines is a recess depth below a top surface of the first insulating layer;
- depositing a conformal liner on the recessed first conductive lines and the first insulating layer;
- depositing a second insulating layer on the liner on the first insulating layer and the recessed first conductive lines;
- forming a hardmask on the second insulating layer, the hardmask having a first opening aligned with one of the first conductive lines;
- forming a photoresist on the hardmask, the photoresist having a second opening aligned with the first opening;
- partially etching the second insulating layer to a depth through the second opening;
- removing the photoresist to leave the hardmask with the first opening;
- and
- etching the second insulating layer through the first opening to expose the liner in the recessed first conductive line;
- and
- removing the liner in the first conductive line to form a via.
A method of forming a self-aligned via, the method comprising:
- providing a substrate comprising a first insulating layer with a plurality of first conductive lines extending in a first direction;
- recessing the first conductive lines so that a top surface of the first conductive lines is a recess depth below a top surface of the first insulating layer;
- depositing a second insulating layer directly on the first insulating layer and the recessed first conductive lines;
- forming a hardmask on the second insulating layer, the hardmask having a first opening aligned with one of the first conductive lines;
- forming a photoresist on the hardmask, the photoresist having a second opening aligned with the first opening;
- partially etching the second insulating layer to a depth through the second opening;
- removing the photoresist to leave the hardmask with the first opening;
- and
- etching the second insulating layer through the first opening to expose the first conductive line to form a via.
Dependencies are inferred from the claim text.