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US 10,593,593 B2Granted
Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation
AssigneeGlobalfoundries Inc.
InventorsVimal Kamineni, Ruilong Xie, Mark Raymond
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Abstract
Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.
Claims13
A method, comprising:
- forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation;
- forming a cap on the cobalt formation;
- removing at least a portion of the inactive feature after forming the cobalt formation and forming the cap, wherein the cobalt formation is substantially not removed while removing the at least the portion of the inactive feature;
- forming a dielectric material above the cap;
- and
- forming a first contact to the cobalt formation.
3 more elements
A system, comprising:
- a semiconductor device processing system to manufacture a semiconductor device;
- and
- a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of the semiconductor device processing system;
- wherein the semiconductor device processing system is adapted to:
- form a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation;
- form a cap on the cobalt formation;
- remove at least a portion of the inactive feature after forming the cobalt formation and forming the cap, wherein the cobalt formation is substantially not removed while removing the at least the portion of the inactive feature;
- form a dielectric material above the cap;
- and
- form a first contact to the cobalt formation.
7 more elements
Dependencies are inferred from the claim text.