Laminate and core shell formation of silicide nanowire

A method of processing a substrate in a process chamber, comprising:

• positioning a substrate in a process region of a process chamber, the substrate having a feature formed therein;
• depositing a metal silicide layer into a feature formed in the substrate, the depositing comprising:
• depositing a metal layer comprising a transition metal into the feature, the metal layer being no more than 2 atoms thick, wherein the transition metal is selected from the group consisting of Nickel (Ni), Iron (Fe), Chromium (Cr), and Manganese (Mn), and when the transition metal is Ni, the metal layer is deposited using a metal-containing precursor selected from the group consisting of (N,N′-di-tert-butyl-acetamidinato)2Ni, Ni[N(t-uut)2], Ni((tBu2N)2CCH3)2, bis(ethylpentadienyl)nickel, Ni[(C2H5)(C5H4)2], and di(tertiary-butyl)amidonickel;
• and
• exposing the metal layer to a plasma formed from a silicon-containing reactant using a first microwave power, the silicon-containing reactant reacting with at least a portion of the metal layer, wherein the first microwave power is provided to the process region of the process chamber at a power level of from 10 W to 5000 W, and wherein while exposing the metal layer to a plasma formed from a silicon-containing reactant, coupling an RF source power to the silicon-containing reactant to form a plasma from the silicon-containing reactant;
• repeating the deposition of the metal silicide layer one or more times to deposit a metal silicide stack;
• thermally treating the metal silicide stack at a temperature between 25 degrees Celsius and 400 degrees Celsius in the presence of radiant energy;
• and
• applying a second microwave power in the process chamber while thermally treating the metal silicide stack.

A method of processing a substrate, comprising:

• positioning a substrate in a process region of a process chamber, the substrate having a feature formed therein;
• depositing a nickel silicide layer into the feature, the depositing comprising:
• depositing a nickel layer into the feature, the nickel layer being a monolayer, wherein the nickel layer is deposited using a metal-containing precursor selected from the group consisting of (N,N′-di-tert-butyl-acetamidinato)2Ni, Ni[N(t-uut)2], Ni((tBu2N)2CCH3)2, bis(ethylpentadienyl)nickel, Ni[(C2H5)(C5H4)2], and di(tertiary-butyl)amidonickel;
• and
• exposing the nickel layer to a plasma formed from a silane using a first microwave power, the first microwave power being provided to the process region of the process chamber at a power level of from 10 W to 5000 W, the substrate being maintained at a temperature between 25 degrees Celsius and 400 degrees Celsius, the silane reacting with at least a portion of the nickel layer;
• repeating the deposition of the nickel silicide layer one or more times to deposit a nickel silicide stack, the nickel silicide stack having a ratio of Ni element to Si element substantially between about 0.8:1 and about 2:1;
• and
• applying a second microwave power in the process chamber while thermal treating the nickel silicide stack,
• wherein:
• while delivering the silane to the nickel layer, coupling an RF source power to the silane to form a plasma from the silane, or
• while coupling the first or second microwave power to the silane, exposing the silane to a radiant energy, the radiant energy comprising UV light.