Substrate processing apparatus and method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorShuhei Saido
Life of this patent
Estimating the term…
Abstract
Wafer processing with no dummies is described. A apparatus includes: a boat that hold a product substrates in array at all of positions where substrates can be held; a tubular reactor that houses the boat; a furnace surrounding an upper side and a lateral side of the reactor; a heater provided in the furnace and adapted to heat a side portion of the reactor; a ceiling heater provided in the furnace and adapted to heat a ceiling of the reactor; and a cap heater provided inside the reactor and below the boat; a gas supply mechanism individually supplying a gas to a top side of each of the product substrates.
Claims7
A substrate processing apparatus comprising:
- a substrate holder configured to hold plurality of substrates in array at respective positions with predetermined intervals and used to hold a plurality of product substrates at all the positions where the substrates are allocable;
- a tubular reactor including an opening through which the substrate holder can be carried in and out at a lower side and a ceiling with a flat inner surface and houses the substrate holder;
- a furnace body surrounding an upper side and a lateral side of the tubular reactor;
- a main heater provided in the furnace body and configured to heat the side portion of the tubular reactor;
- a ceiling heater provided in the furnace body and configured to heat the ceiling;
- a lid that closes the opening;
- a cap heater arranged inside the tubular reactor and also located below the substrate holder and configured to perform heating;
- and
- a gas supply mechanism configured to individually supply a gas to a top side of each of the plurality of product substrates held by the substrate holder inside the tubular reactor,
- wherein when a source gas decomposable in a gas phase is supplied from the gas supply mechanism in a state where the product substrates are held at all of the positions in the substrate holder, a partial pressure of a species of a product gas generated by the decomposition becomes uniform at all of the positions;
- wherein the substrate holder includes a plurality of upstanding support columns and a disk-shaped top plate that fixes upper ends of the plurality of support columns;
- wherein a diameter of the top plate is set to 90% or more and 98% or less of an inner diameter of the tubular reactor substrate;
- and
- wherein volume of an upper end space partitioned from others by the top plate and interposed between the ceiling and the top plate is set to 1 time or more and 3 times or less volume of a space interposed between the product substrates adjacent to each other and held by the substrate holder.
A substrate processing apparatus comprising:
- a substrate holder configured to hold plurality of substrates in array at respective positions with predetermined intervals and used to hold a plurality of product substrates at all the positions where the substrates are allocable;
- a tubular reactor including an opening through which the substrate holder can be carried in and out at a lower side and a ceiling with a flat inner surface and houses the substrate holder;
- a furnace body surrounding an upper side and a lateral side of the tubular reactor;
- a main heater provided in the furnace body and configured to heat the side portion of the tubular reactor;
- a ceiling heater provided in the furnace body and configured to heat the ceiling;
- a lid that closes the opening;
- a cap heater arranged inside the tubular reactor and also located below the substrate holder and configured to perform heating;
- and
- a gas supply mechanism configured to individually supply a gas to a top side of each of the plurality of product substrates held by the substrate holder inside the tubular reactor,
- wherein when a source gas decomposable in a gas phase is supplied from the gas supply mechanism in a state where the product substrates are held at all of the positions in the substrate holder, a partial pressure of a species of a product gas generated by the decomposition becomes uniform at all of the positions;
- wherein the substrate holder further includes a disk-shaped or annular bottom plate that fixes lower ends of the plurality of support columns to each other and is fitted to an upper surface of the insulation structure;
- volume of a lower end space interposed between the bottom plate or the upper surface of the heat insulation structure and the product substrate held at a lowermost position in the substrate holder where the substrate can be held is set to 0.5 times or more and 1.5 times or less volume of a space interposed between the product substrates adjacent to each other and held by the substrate holder;
- and
- the gas supply mechanism individually supplies the source gas to the lower end space.
Dependencies are inferred from the claim text.