Thrumold post package with reverse build up hybrid additive structure

A method of forming semiconductor devices, comprising:

• forming a redistribution structure having a first side and a second side opposite the first side;
• coupling a plurality of semiconductor dies to the first side of the redistribution structure;
• forming a plurality of conductive columns on the first side of the redistribution structure, wherein individual ones of the conductive columns (a) are electrically coupled to a corresponding one of the semiconductor dies via the redistribution structure and (b) extend beyond an elevation of an upper surface of the corresponding one of the semiconductor dies, the upper surface facing away from the first side of the redistribution structure;
• depositing a molded material over the first side of the redistribution structure such that the molded material at least partially surrounds and contacts the conductive columns and the semiconductor dies;
• and
• cutting the redistribution structure and the molded material between the semiconductor dies to singulate the semiconductor dies and the conductive columns electrically coupled thereto to thereby form individual semiconductor devices.

A method of manufacturing a semiconductor device, the method comprising:

• forming a redistribution structure that does not include a pre-formed substrate, the redistribution structure having a first side and a second side opposite the first side;
• coupling a semiconductor die to the first side of the redistribution structure, the semiconductor die having a front side facing the first side of the redistribution structure and a back side opposite the front side;
• forming conductive columns on the first side of the redistribution structure to extend beyond a surface elevation of the back side of the semiconductor die, wherein the redistribution structure electrically couples the semiconductor die to the conductive columns;
• and
• depositing a molded material over the first side of the redistribution structure such that the molded material at least partially surrounds and contacts the conductive columns and the semiconductor die.