Magnetic induction plasma source for semiconductor processes and equipment

A magnetic induction plasma system, comprising:

• a first plasma source including a plurality of first sections and a plurality of second sections fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source, wherein each of the plurality of second sections comprises a dielectric material, wherein the plurality of first sections and the plurality of second sections are arranged in an alternating manner such that the plurality of first sections are electrically insulated from each other at least in part by the plurality of second sections;
• a plurality of first magnetic elements, wherein each of the plurality of first magnetic elements defines a closed loop and is positioned around one of the plurality of second sections;
• and
• wherein the first plasma source defines a first toroidal shape, the first toroidal shape having a first toroidal extension and a first toroidal axis perpendicular to the first toroidal extension, wherein each of the plurality of first sections includes a first dimension parallel to the first toroidal axis, wherein each of the plurality of second sections includes a second dimension parallel to the first toroidal axis, wherein the first dimension is greater than the second dimension such that the plurality of second sections defines a plurality of annular recesses, wherein each of the plurality of annular recesses is configured to receive one of the plurality of first magnetic elements such that the magnetic induction plasma system is integratable into a semiconductor processing chamber having a gas inlet assembly disposed upstream of the magnetic induction plasma system, wherein the plurality of first sections is configured to support a planar surface of the gas inlet assembly, and wherein the plurality of annular recesses is configured to allow the plurality of magnetic elements to be disposed below the planar surface of the gas inlet assembly without contacting the planar surface of the gas inlet assembly.