Method of manufacturing solar cell
AssigneeLG Electronics Inc.
InventorsKyoungsoo Lee, Sunghyun Hwang, Sangwook Park
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.
Claims12
A method of manufacturing a solar cell, the method comprising:
- chemical vapor depositing a first intrinsic amorphous silicon layer on a first surface of the semiconductor substrate formed of single crystalline silicon and a second intrinsic amorphous silicon layer on a second surface opposite the first surface of the semiconductor substrate;
- chemical vapor depositing a first conductive region formed of an amorphous silicon layer containing impurities of a first conductivity type opposite a conductivity type of the semiconductor substrate on the first intrinsic amorphous silicon layer and a second conductive region formed of an amorphous silicon layer containing impurities of a second conductivity type opposite the first conductivity type on the second intrinsic amorphous silicon layer;
- and
- forming a first electrode electrically connected to the first conductive region and a second electrode electrically connected to the second conductive region,
- wherein the chemical vapor depositing of the first and second intrinsic amorphous silicon layers includes each depositing intrinsic amorphous silicon on the surface first and second surfaces of the semiconductor substrate formed of the single crystal silicon at a deposition rate of 0.5 nm/sec to 2.0 nm/sec,
- wherein a bandgap energy of the solar cell including the intrinsic amorphous silicon layer is approximately 1.8 eV to approximately 2.0 eV based on the deposition rate of 0.5 nm/sec to 2.0 nm/sec,
- wherein a ratio of an amount (sccm) of hydrogen gas (H2) to an amount (sccm) of silane (SiH4) gas for chemical vapor depositing the intrinsic amorphous silicon layer is 1:5 to 1:100, and
- wherein a deposition rate of the first intrinsic amorphous silicon layer is greater than the deposition rate of the second intrinsic amorphous silicon layer.
A method of manufacturing a solar cell, the method comprising:
- depositing an intrinsic amorphous silicon layer on a first surface and a second surface opposite the first surface of a semiconductor substrate formed of single crystal silicon to form a first amorphous tunneling layer and a second amorphous tunneling layer each lacking crystalline silicon;
- depositing a first conductive region formed of an amorphous silicon layer containing impurities of a first conductivity type opposite a conductivity type of the semiconductor substrate on the first amorphous tunneling layer and a second conductive region formed of an amorphous silicon layer containing impurities of a second conductivity type opposite the first conductivity type on the second amorphous tunneling layer;
- and
- forming a first electrode electrically connected to the first conductive region and a second electrode electrically connected to the second conductive region,
- wherein the depositing of the intrinsic amorphous silicon layer includes depositing intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec,
- wherein a bandgap energy of the solar cell including the intrinsic amorphous silicon layer is approximately 1.8 eV to approximately 2.0 eV based on the deposition rate of 0.5 nm/sec to 2.0 nm/sec,
- wherein a ratio of an amount (sccm) of hydrogen gas (H2) to an amount (sccm) of silane (SiH4) gas for depositing the intrinsic amorphous silicon layer is 1:5 to 1:100, and wherein a deposition rate of the first amorphous tunneling layer is greater than the deposition rate of the second amorphous tunneling layer.
Dependencies are inferred from the claim text.