Method for doping semiconductor substrates by means of a co-diffusion process and doped semiconductor substrate produced by means of said method

A method for doping semiconductor substrates by a co-diffusion process, comprising

• a) coating a semiconductor substrate, at least on one side, with a layer comprising at least one first dopant, to obtain a coated semiconductor substrate having a coated layer, wherein the at least one first dopant is present in the coated layer and not within the semiconductor substrate,
• b) disposing respectively two of the coated semiconductor substrates from a), which still have the coated layers produced in a), in a process chamber such that two of their coated sides are in direct contact,
• c) introducing at least one second dopant, in the form of a gaseous dopant source, into the process chamber, and
• d) diffusing the first dopant and the second dopant into the semiconductor substrates at the same time, at least partially, wherein the first dopant diffuses into the semiconductor substrates from the coated layers provided in a).