Method for manufacturing semiconductor structure

Abstract

This application relates to the technical field of semiconductors, and teaches methods for manufacturing a semiconductor structure. One implementation of a method includes: forming a semiconductor layer at a surface of a to-be-etched material layer on a substrate; forming an amorphous carbon layer on the semiconductor layer; forming a patterned mask layer on the amorphous carbon layer; and etching the amorphous carbon layer, the semiconductor layer, and the to-be-etched material layer using the patterned mask layer as a mask. This application may improve uniformity of the amorphous carbon layer, so that a position of a pattern that is formed after the to-be-etched material layer is etched does not deviate from an expected position, and a shape of the pattern is an expected shape.

Dependencies are inferred from the claim text.