Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth

A method, comprising:

• generating a pressure within a processing volume between 2 Torr and 60 Torr;
• heating a substrate in the processing volume to a temperature between 300 degrees Celsius and 550 degrees Celsius;
• flowing a first gas mixture comprising silane gas (SiH4) into the processing volume having the substrate positioned therein;
• flowing a second gas mixture comprising diborane (B2H6) at a flow rate between about 10 sccm to about 1000 sccm into the processing volume having the substrate positioned therein;
• and
• depositing a boron-doped amorphous silicon layer on the substrate, the boron-doped amorphous silicon layer having 40 atomic percentage of hydrogen or less.

A method, comprising:

• generating a pressure within a processing volume between 2 Torr and 60 Torr;
• heating a substrate in the processing volume to a temperature between 300 degrees Celsius and 550 degrees Celsius, wherein the substrate comprises:
• a dielectric layer;
• and
• conductive contacts disposed within the dielectric layer and separated from the dielectric layer by barrier layers;
• flowing a silane-containing gas mixture into the processing volume having the substrate positioned therein;
• flowing a borane-containing gas mixture at a flow rate between about 10 sccm to about 1000 sccm into the processing volume having the substrate positioned therein;
• and
• depositing a boron-doped amorphous silicon layer on the substrate, the boron-doped amorphous silicon layer having 40 atomic percentage of hydrogen or less.