Manufacturing method of a semiconductor device
AssigneeToshiba Memory Corporation
InventorsTakashi Furuhashi, Masayuki Tanaka, Shinji Mori, Kenichiro Toratani
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Abstract
According to an embodiment, a manufacturing method of a semiconductor device includes: carrying a substrate alternately stacked an electrode layer and an insulation layer into a chamber; increasing the temperature in the chamber to a predetermined temperature; and supplying hydrogen and material gas including metal simultaneously into the chamber, and supplying oxidizing gas the partial pressure ratio of which to the hydrogen is set so as to provide an atmosphere of reducing the electrode layer, by using an ALD method, and thereby forming, on a surface of the electrode layer and a surface of the insulation layer, a metal oxide layer obtained by oxidizing the metal.
Claims12
A manufacturing method of a semiconductor device comprising:
- introducing a substrate into a chamber, an insulating layer and an electrode layer being formed on the substrate;
- increasing a temperature in the chamber to a predetermined temperature;
- simultaneously supplying hydrogen and material gas including metal into the chamber;
- and
- forming a metal oxide layer on a surface of the electrode layer and on a surface of the insulating layer by supplying oxidizing gas into the chamber,
- wherein the oxidizing gas and the hydrogen gas are simultaneously supplied from respective sources into the chamber under a predetermined partial pressure ratio to oxidize the metal of the material gas and to reduce a metal of the electrode layer.
Dependencies are inferred from the claim text.