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US 10,593,541 B2Granted
Film deposition method
AssigneeTokyo Electron Limited
InventorHitoshi Kato
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Abstract
A film deposition method is provided. In the method, an aminosilane gas is adsorbed on a surface of a substrate including a recess pattern. Next, a silicon oxide film is deposited on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas. Then, the silicon oxide film is modified by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma.
Claims14
A film deposition method, comprising:
- adsorbing an aminosilane gas on a surface of a substrate including a recess pattern;
- depositing a silicon oxide film on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas;
- and
- modifying the silicon oxide film by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma generated using an antenna, oxygen plasma being generated under the antenna induced by nitrogen plasma generated under the antenna, the nitrogen plasma having excitation energy smaller than excitation energy of the oxygen plasma.
1 more element
Dependencies are inferred from the claim text.