Niobium oxide sintered compact, sputtering target formed from said sintered compact, and method of producing niobium oxide sintered compact
AssigneeJX Nippon Mining & Metals Corporation
InventorSatoyasu Narita
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Abstract
The present invention provides a niobium oxide sintered compact having a composition of NbOx (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.
Claims14
A niobium oxide sintered sputtering target having a composition of NbOx (2<x<2.5) and a relative density of 90% or higher, wherein a ratio of an X-ray diffraction peak intensity from (110) plane of Nb to an X-ray diffraction peak intensity which is highest among intensities of X-ray diffraction peaks from (400) plane of NbO2, (001) plane of Nb2O5, and (110) plane of Nb2O5 and of X-ray diffraction peaks observable within a range of 2θ from 20° to 60° is 1% or less, and wherein a ratio of an X-ray diffraction peak intensity from a Nb12O29 (400) plane relative to an X-ray diffraction peak intensity from a NbO2 (400) plane is 10% or higher.
Dependencies are inferred from the claim text.