Substrate support for plasma etch operations
AssigneeApplied Materials, Inc.
InventorsLarry Frazier, Cheng-Hsiung Matthew Tsai, John C. Forster, Mei Po Yeung, Michael S. Jackson
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.
Claims19
A substrate support to support a substrate in a processing chamber, comprising:
- a dielectric insulator;
- a conductive plate supported on the dielectric insulator, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein the bottom surface includes a horizontally extending section parallel to the top surface and a tapered section which tapers upward and radially outward of the horizontally extending section;
- and
- a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductive plate, wherein the tapered section is entirely disposed radially beyond the substrate support surface.
A substrate support to support a substrate in a processing chamber, comprising:
- a dielectric insulator made of quartz;
- a titanium conductive plate supported on the dielectric insulator, the titanium conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein the bottom surface includes a horizontally extending section parallel to the top surface and a tapered section which tapers upward and radially outward of the horizontally extending section;
- and
- a dielectric plate made of quartz or ceramic disposed upon a top surface of the titanium conductive plate comprising a raised lip having an inner wall defining a substrate support surface, wherein the tapered section is entirely disposed radially beyond the substrate support surface;
- wherein the quartz dielectric insulator includes a recess formed in a top surface thereof, the recess configured to accept the titanium conductive plate and maintain contact with at least a portion of the bottom surface and a portion of the titanium conductive plate.
Dependencies are inferred from the claim text.