Plasma processing apparatus

A capacitively coupled plasma processing apparatus, comprising:

• a chamber body configured to provide a chamber;
• a first electrode and a second electrode installed such that an internal space of the chamber is defined between the first electrode and the second electrode;
• a high frequency power supply;
• a matcher for impedance matching connected to the high frequency power supply;
• a transformer including a primary coil coupled to the high frequency power supply via the matcher, a first secondary coil and a second secondary coil, wherein one end of the first secondary coil is connected to the first electrode and one end of the second secondary coil is connected to the second electrode;
• and
• at least one impedance adjusting circuit having a variable condenser installed in at least one of a first serial circuit and a second serial circuit, the first serial circuit being defined by a serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, the second serial circuit being defined by a serial circuit between the second electrode and a ground connected to the other end of the second secondary coil,
• wherein the transformer further includes a rotary shaft configured to rotate using a central axis line of the rotary shaft as a rotation axis line,
• the primary coil extends around a first axis line perpendicular to the central axis line,
• the first secondary coil extends around a second axis line and is supported by the rotary shaft, and the second axis line is perpendicular to the central axis line within a region surrounded by the primary coil, and
• the second secondary coil extends around a third axis line and is supported by the rotary shaft, and the third axis line is perpendicular to the central axis line within the region and defines a predetermined angle with respect to the second axis line.