Magnetoresistance effect device and magnetoresistance effect module

A magnetoresistance effect device comprising:

• a first magnetoresistance effect element which includes a first magnetization free layer, a first magnetization fixed layer, and a first spacer layer;
• a metal layer;
• a first electrode;
• an input terminal;
• an output terminal;
• and
• a reference potential terminal,
• wherein the metal layer, the first magnetization free layer, the first spacer layer, the first magnetization fixed layer, and the first electrode are disposed in this order,
• wherein the first magnetization fixed layer is in electrical contact with the first electrode,
• wherein the first electrode is connected to the output terminal configured to output a high-frequency signal,
• wherein the metal layer includes a first region which is overlapped with the first magnetization free layer when viewed from a lamination direction of the first magnetization free layer,
• wherein the metal layer is connected to the input terminal and the reference potential terminal so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal through the first region, and
• wherein the first magnetoresistance effect element is provided with an application terminal configured to apply a DC current or a DC voltage.