Memristive arrays with a waveform generation device
AssigneeHewlett Packard Enterprise Development LP
InventorsBrent Buchanan, Le Zheng
Life of this patent
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Abstract
A memristive array includes a number of bit cells, each bit cell including a memristive element and a selecting transistor serially coupled to the memristive element. The array also includes a waveform generation device coupled to the number of bit cells. The waveform generation device generates a shaped waveform to be applied to the number of bit cells to switch a state of the memristive element. The waveform generation device passes the shaped waveform to gates of the selecting transistors of the number of bit cells.
Claims16
An array comprising:
- a number of bit cells, each bit cell comprising:
- a memristive element;
- and
- a selecting transistor serially coupled to the memristive element;
- and
- a waveform generation device coupled to the number of bit cells, wherein the waveform generation device comprises:
- a number of resistors:
- a number of regulating transistors serially coupled to the number of resistors;
- and
- an operational amplifier to receive inputs of an input waveform and from the drain of the number of regulating transistors to form an output waveform,
- the waveform generation device to:
- generate a shaped waveform to be applied to the number of bit cells to switch a state of the memristive element;
- and
- pass the shaped waveform to gates of the selecting transistors of the number of bit cells.
An array comprising:
- a number of memristive elements comprising:
- a number of row lines;
- a number of bit cells disposed between adjacent row lines, wherein:
- each bit cell comprises a memristive element serially coupled to multiple parallel selecting transistors and a number of diodes to regulate current flow through one of the parallel selecting transistors;
- and
- gates of the parallel selecting transistors of a column of bit cells are coupled to one another via a column line;
- a number of waveform generation devices, wherein:
- a waveform generation device is coupled to the column of bit cells;
- the waveform generation device comprises multiple waveform generation cells, each waveform generation cell comprising a resistor, a regulating transistor, a diode, and a switch;
- gates of regulating transistors of the waveform generation cells are coupled to gates of selecting transistors of the column of bit cells via the column line;
- and
- each waveform generation cell generates a distinct waveform that is passed to gates of selecting transistors of the column of bit cells.
An method of switching a state of a memristive element, the switching comprising:
- a number of bit cells, each bit cell comprising:
- a memristive element;
- and
- a selecting transistor serially coupled to the memristive element;
- and
- a waveform generation device coupled to the number of bit cells, the waveform generation device to:
- generating at least one of a set waveform and a reset shaped waveform, by a waveform generation device, to be applied to a number of bit cells coupled to the waveform generation device, each of the bit cells comprising the memristive element and a selecting transistor serially coupled to the memristive element;
- and
- passing the at least one of the set waveform and the reset shaped waveform to gates of the selecting transistors of the number of bit cells.
Dependencies are inferred from the claim text.