Self-selecting memory array with horizontal bit lines

A method of forming a memory device, comprising:

• forming a stack comprising a first dielectric material, a second dielectric material, and a third dielectric material;
• removing material in a first direction to form a first plurality of lines in the first dielectric material, the second dielectric material, and the third dielectric material;
• removing material in a second direction to form a second plurality of lines in the first dielectric material;
• forming a plurality of first access lines in contact with the first dielectric material;
• depositing a self-selecting material to form a plurality of memory cells in contact with at least a part of a plurality of second access lines, the plurality of second access lines in contact with the self-selecting material.

A method of forming a memory device, comprising:

• forming a stack comprising a first dielectric material, a second dielectric material, and a third dielectric material;
• removing material in a first direction to form a first plurality of lines in the first dielectric material, the second dielectric material, and the third dielectric material;
• removing material in a second direction to form a second plurality of lines in the first dielectric material;
• forming a plurality of first access lines coupled with the first dielectric material;
• forming a plurality of discrete self-selecting material segments coupled with the plurality of first access lines;
• and
• forming a plurality of second access lines that are coupled with each of the plurality of discrete self-selecting material segments, each of the plurality of discrete self-selecting material segments positioned between a first side of a first access line of the plurality of second access lines and a second side of a second access line of the plurality of second access lines.