MRAM read and write methods using an incubation delay interval
AssigneeArm Limited
InventorsAkhilesh Ramlaut Jaiswal, Mudit Bhargava
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Abstract
In a particular implementation, a method to perform a read operation on a magneto-resistive random-access memory (MRAM) bit-cell includes: providing a voltage signal across one or more storage elements of the MRAM bit-cell, determining an electrical resistance of the one or more storage elements of the MRAM bit-cell, and removing the voltage signal from the MRAM bit-cell prior to an end of an incubation delay interval.
Claims20
A method of performing a read operation on a magneto-resistive random-access memory (MRAM) bit-cell comprising:
- providing a voltage signal across one or more storage elements of the MRAM bit-cell;
- determining an electrical resistance of the one or more storage elements of the MRAM bit-cell;
- and
- removing the voltage signal from the MRAM bit-cell prior to an end of an incubation delay interval.
A method of performing read and write operations on a magneto-resistive random-access memory (MRAM) bit-cell comprising:
- for a write operation:
- applying a first voltage signal across a resistive memory of the MRAM bit-cell, wherein the first voltage signal is greater than a critical write voltage, and wherein the first voltage signal is applied for a duration longer than a critical write duration;
- and
- for a read operation:
- applying a second voltage signal across the resistive memory of the MRAM bit-cell, wherein the second voltage signal is greater than or close to the critical write voltage.
A method of preventing an undesired write operation in a magneto-resistive random-access memory (MRAM) bit-cell comprising:
- in response to a voltage signal being applied across one or more storage elements of the MRAM bit-cell, removing the voltage signal from the MRAM bit-cell prior to an end of an incubation delay interval.
Dependencies are inferred from the claim text.