Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
AssigneeTDK Corporation
InventorsYohei Shiokawa, Tomoyuki Sasaki
Life of this patent
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Abstract
A spin current magnetization rotational element includes: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring. The spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, the number of a plurality of the interfacial spin generation layers is two or greater, and in the spin-orbit torque wiring, one of the plurality of interfacial spin generation layers is closest to the first ferromagnetic metal layer.
Claims19
A spin current magnetization rotational element, comprising:
- a first ferromagnetic metal layer for a magnetization direction to be changed;
- and
- a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring
- wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction,
- a number of a plurality of the interfacial spin generation layers is two or greater, and
- in the spin-orbit torque wiring, one of the plurality of interfacial spin generation layers is closest to the first ferromagnetic metal layer.
Dependencies are inferred from the claim text.