Electronic synapse having spin-orbit torque induced spike-timing dependent plasticity

An electronic synapse, comprising:

• a) a heavy metal layer;
• b) a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer;
• c) a pinned layer having perpendicular magnetic anisotropy;
• d) an oxide tunnel barrier connected between a top surface of the domain wall magnet layer and a bottom surface of the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the domain wall magnet layer form a magnetic tunnel junction;
• and
• e) a non-magnetic electrical contact having a bottom surface in contact with the top surface of the domain wall magnet layer, the non-magnetic electrical contact electrically isolated from the magnetic tunnel junction.