Redundancy implementation using bytewise shifting

A method for increasing reliability of memory accesses, comprising:

• receiving write data segmented into a plurality of write groups;
• receiving a plurality of mask bits, each mask bit assigned to a respective write group;
• and
• sending control signals to an array comprising a plurality of columns;
• in response to determining there is a failed column in the array:
• setting the control signals to indicate a redundant column is to be accessed rather than the failed column in the array;
• in response to receiving a write operation comprising write data:
• for data bits of the write data targeting columns between the redundant column and the failed column, shifting the data bits toward the redundant column;
• for a first write group of the write data targeting columns between the redundant column and the failed column, replacing only a first mask bit assigned to the first write group with a second mask bit assigned to a second write group without replacing other mask bits assigned to the first write group;
• and
• writing data in columns of the memory array other than the targeted failed column, wherein values of the data are based at least in part on the write data.

A memory comprising:

• one or more arrays, each comprising a plurality of columns and configured to store data;
• a plurality of sequential elements for storing write data segmented into a plurality of write groups and a plurality of mask bits, each mask bit assigned to a respective write group;
• and
• redundancy logic configured to:
• send control signals to the one or more arrays;
• in response to determining there is a failed column in the array, the circuitry is configured to:
• set the control signals to indicate a redundant column is to be accessed rather than the failed column in the array;
• in response to receiving a write operation comprising write data:
• for data bits of the write data targeting columns between the redundant column and the failed column, shift the data bits toward the redundant column;
• for a first write group of the write data targeting columns between the redundant column and the failed column, replace only a first mask bit assigned to the first write group with a second mask bit assigned to a second write group without replacing other mask bits assigned to the first write group;
• and
• write data in columns of the memory array other than the targeted failed column, wherein values of the data are based at least in part on the write data.