Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography

Abstract

A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength λ from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Dependencies are inferred from the claim text.